DIODES Crystal vibration company profile
Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor's Smallcap 600 and Russell 3000 Index company, is a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. Diodes serves the automotive, industrial, computing, consumer electronics, and communications markets.
Our diverse product portfolio covers diodes; rectifiers; transistors; MOSFETs; SiC diodes and MOSFETs; protection devices; logic; voltage translators; amplifiers and comparators; sensors; and power management devices such as AC-DC converters, DC-DC switching, linear voltage regulators, voltage references, LED drivers, power switches, and voltage supervisors. We also have timing and connectivity solutions including clock ICs, crystal oscillators, PCIe packet switches, multi-protocol switches, interface products, and signal integrity solutions for high-speed signals.
Diodes’ corporate headquarters and Americas’ sales offices are located in Plano, Texas, and Milpitas, California. Design, marketing, and engineering centers are located in Plano, Milpitas, U.S.; Taipei, Taoyuan City, Zhubei City, Taiwan; Shanghai, Yangzhou, China; Oldham, England; and Neuhaus, Germany. Diodes’ wafer fabrication facilities are located in South Portland, Maine, U.S., Oldham, Greenock, UK; Shanghai and Wuxi, China; and Keelung and Hsinchu, Taiwan. Diodes has assembly and test facilities located in Shanghai, Chengdu, and Wuxi, China; Neuhaus, Germany; and Jhongli and Keelung, Taiwan. Additional engineering, sales, warehouse, and logistics offices are located in Taipei, Taiwan; Hong Kong; Oldham, UK; Shanghai, Shenzhen, Wuhan, and Yangzhou, China; Seongnam-si, South Korea; and Munich, Frankfurt, Germany; with support offices throughout the world.车载晶振
The company’s manufacturing facilities have achieved certifications in the internationally recognized standards of ISO 9001:2015, ISO 14001:2015, and, for automotive products, IATF 16949:2016.
Diodes Incorporated is also C-TPAT certified.
These Quality Awards reflect the superior quality-control techniques established at Diodes Incorporated and further enhance our credibility as a vendor-of-choice to OEMs increasingly concerned with quality and consistency.
Our market focus is on high-growth, end-user applications in the following segments:
Automotive: connected driving, comfort/style/safety, and electrification/powertrain
Industrial: embedded systems, precision controls, and IIoT
Computing: cloud computing including server, storage, and data center applications
Consumer Electronics: IoT, wearables, home automation, and smart infrastructure
Communications: smart phones, 5G networks, advanced protocols, and charging solutions
DIODES原厂代码 | 生产商品牌 | 型号 | 类型 | 频率 | 输出 | 电压 | 频率稳定度 | 工作温度 |
FK1330001Z | Diodes晶振 | FK | XO | 13.3333MHz | LVCMOS | 3.3V | ±25ppm | -40°C ~ 85°C |
FK1330001Z | Diodes晶振 | FK | XO | 13.3333MHz | LVCMOS | 3.3V | ±25ppm | -40°C ~ 85°C |
FK1330001Z | Diodes晶振 | FK | XO | 13.3333MHz | LVCMOS | 3.3V | ±25ppm | -40°C ~ 85°C |
FJ2400011 | Diodes晶振 | FJ | XO | 24MHz | LVCMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FJ2400011 | Diodes晶振 | FJ | XO | 24MHz | LVCMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FJ2400011 | Diodes晶振 | FJ | XO | 24MHz | LVCMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FJ2400002 | Diodes晶振 | FJ | XO | 24MHz | LVCMOS | 1.8V | ±50ppm | -40°C ~ 85°C |
FJ2400002 | Diodes晶振 | FJ | XO | 24MHz | LVCMOS | 1.8V | ±50ppm | -40°C ~ 85°C |
FJ2400002 | Diodes晶振 | FJ | XO | 24MHz | LVCMOS | 1.8V | ±50ppm | -40°C ~ 85°C |
FJ1600002 | Diodes晶振 | FJ | XO | 16MHz | LVCMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FJ1600002 | Diodes晶振 | FJ | XO | 16MHz | LVCMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FJ1600002 | Diodes晶振 | FJ | XO | 16MHz | LVCMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FJ1120001Z | Diodes晶振 | FJ | XO | 11.2896MHz | LVCMOS | 3.3V | ±25ppm | -40°C ~ 85°C |
FJ1120001Z | Diodes晶振 | FJ | XO | 11.2896MHz | LVCMOS | 3.3V | ±25ppm | -40°C ~ 85°C |
FJ1120001Z | Diodes晶振 | FJ | XO | 11.2896MHz | LVCMOS | 3.3V | ±25ppm | -40°C ~ 85°C |
FM3900001Z | Diodes晶振 | FM | XO | 39.0625MHz | LVCMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FM3900001Z | Diodes晶振 | FM | XO | 39.0625MHz | LVCMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FM3900001Z | Diodes晶振 | FM | XO | 39.0625MHz | LVCMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FKA000018Z | Diodes晶振 | FK | XO | 100MHz | LVCMOS | 1.8V | ±50ppm | -40°C ~ 85°C |
FKA000018Z | Diodes晶振 | FK | XO | 100MHz | LVCMOS | 1.8V | ±50ppm | -40°C ~ 85°C |
FKA000018Z | Diodes晶振 | FK | XO | 100MHz | LVCMOS | 1.8V | ±50ppm | -40°C ~ 85°C |
FK2400017 | Diodes晶振 | FK | XO | 24MHz | LVCMOS | 3.3V | ±25ppm | -40°C ~ 85°C |
FK2400017 | Diodes晶振 | FK | XO | 24MHz | LVCMOS | 3.3V | ±25ppm | -40°C ~ 85°C |
FK2400017 | Diodes晶振 | FK | XO | 24MHz | LVCMOS | 3.3V | ±25ppm | -40°C ~ 85°C |
FK2450016 | Diodes晶振 | FK | XO | 24.576MHz | LVCMOS | 1.8V | ±25ppm | -20°C ~ 70°C |
FK2450016 | Diodes晶振 | FK | XO | 24.576MHz | LVCMOS | 1.8V | ±25ppm | -20°C ~ 70°C |
FK2450016 | Diodes晶振 | FK | XO | 24.576MHz | LVCMOS | 1.8V | ±25ppm | -20°C ~ 70°C |
FK2500025 | Diodes晶振 | FK | XO | 25MHz | LVCMOS | 3.3V | ±25ppm | -40°C ~ 85°C |
FK2500025 | Diodes晶振 | FK | XO | 25MHz | LVCMOS | 3.3V | ±25ppm | -40°C ~ 85°C |
FK2500025 | Diodes晶振 | FK | XO | 25MHz | LVCMOS | 3.3V | ±25ppm | -40°C ~ 85°C |
FK2500067 | Diodes晶振 | FK | XO | 25MHz | LVCMOS | 3.3V | ±50ppm | -40°C ~ 105°C |
FK2500067 | Diodes晶振 | FK | XO | 25MHz | LVCMOS | 3.3V | ±50ppm | -40°C ~ 105°C |
FK2500067 | Diodes晶振 | FK | XO | 25MHz | LVCMOS | 3.3V | ±50ppm | -40°C ~ 105°C |
FK1220016Z | Diodes晶振 | FK | XO | 12.288MHz | LVCMOS | 1.8V | ±50ppm | -40°C ~ 85°C |
FK1220016Z | Diodes晶振 | FK | XO | 12.288MHz | LVCMOS | 1.8V | ±50ppm | -40°C ~ 85°C |
FK1220016Z | Diodes晶振 | FK | XO | 12.288MHz | LVCMOS | 1.8V | ±50ppm | -40°C ~ 85°C |
FJ2500009 | Diodes晶振 | FJ | XO | 25MHz | LVCMOS | 3.3V | ±25ppm | -40°C ~ 85°C |
FJ2500009 | Diodes晶振 | FJ | XO | 25MHz | LVCMOS | 3.3V | ±25ppm | -40°C ~ 85°C |
FJ2500009 | Diodes晶振 | FJ | XO | 25MHz | LVCMOS | 3.3V | ±25ppm | -40°C ~ 85°C |
FJ2500036Z | Diodes晶振 | FJ | XO | 25MHz | LVCMOS | 1.8V | ±25ppm | -20°C ~ 70°C |
FJ2500036Z | Diodes晶振 | FJ | XO | 25MHz | LVCMOS | 1.8V | ±25ppm | -20°C ~ 70°C |
FJ2500036Z | Diodes晶振 | FJ | XO | 25MHz | LVCMOS | 1.8V | ±25ppm | -20°C ~ 70°C |
FK2500021 | Diodes晶振 | FK | XO | 25MHz | CMOS | 1.8V | ±50ppm | -40°C ~ 85°C |
FK0800003 | Diodes晶振 | FK | XO | 8MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FK2500022 | Diodes晶振 | FK | XO | 25MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FK2500022 | Diodes晶振 | FK | XO | 25MHz | LVCMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FK5000013 | Diodes晶振 | FK | XO | 50MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FK5000013 | Diodes晶振 | FK | XO | 50MHz | LVCMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FK1200011 | Diodes晶振 | FK | XO | 12MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FK1200011 | Diodes晶振 | FK | XO | 12MHz | LVCMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FK0100001 | Diodes晶振 | FK | XO | 1MHz | CMOS | 1.8V | ±50ppm | -20°C ~ 70°C |
FK0100002 | Diodes晶振 | FK | XO | 1MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FK0180004 | Diodes晶振 | FK | XO | 1.843MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FK0180005 | Diodes晶振 | FK | XO | 1.843MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FK0180006 | Diodes晶振 | FK | XO | 1.843MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FK0200002 | Diodes晶振 | FK | XO | 2MHz | CMOS | 2.5V | ±50ppm | -20°C ~ 70°C |
FK0360002 | Diodes晶振 | FK | XO | 3.686MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FK0360003 | Diodes晶振 | FK | XO | 3.686MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FK0360004 | Diodes晶振 | FK | XO | 3.686MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FK0400005 | Diodes晶振 | FK | XO | 4MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FK0400007 | Diodes晶振 | FK | XO | 4MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FK0500002 | Diodes晶振 | FK | XO | 5MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FK0530001 | Diodes晶振 | FK | XO | 5.33MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FK0610001 | Diodes晶振 | FK | XO | 6.14MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FK0670001 | Diodes晶振 | FK | XO | 6.758MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FK0800004 | Diodes晶振 | FK | XO | 8MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FK0810001 | Diodes晶振 | FK | XO | 8.192MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FK0810002 | Diodes晶振 | FK | XO | 8.192MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FK0810003 | Diodes晶振 | FK | XO | 8.192MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FK1000006 | Diodes晶振 | FK | XO | 10MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FK1000007 | Diodes晶振 | FK | XO | 10MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FK1000008 | Diodes晶振 | FK | XO | 10MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FK1200010 | Diodes晶振 | FK | XO | 12MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FK1200013 | Diodes晶振 | FK | XO | 12MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FK1220006 | Diodes晶振 | FK | XO | 12.288MHz | CMOS | 1.8V | ±25ppm | -20°C ~ 70°C |
FK1220007 | Diodes晶振 | FK | XO | 12.288MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
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